Semiconductors
Specialized in semiconductor power devices and electrical connector agency services

IGBT

The unique Trident-Gate Bipolar Transistor (TGBT) device structure is used to obtain lower on-state voltage drop and lower switching loss. At present, the company has launched several series of first and second generation TGBTs, covering 600V~1350V, suitable for applications in PV energy storage inverters, DC charging piles, automotive main drive, UPS, etc. The company has also developed an ultra-high speed series (E series) of TGBTs with operating frequencies of 60-100KHz, which can achieve higher efficiency while meeting the further high frequency of power supply systems.

ORIENTAL SEMI N channel mosfet
OST20N135HRF
OST50N65HSZF
OST90N60HCZF
OST40N80HF
OST75N65HZF
OST50N65HF
OST75N65HSZF
OST60N65HSZF
OST75N65HNF
OST75N65HMF
OST75N65HSMF
OST80N65HMF
OST60N65HMF
OST75N65HSXF
OST60N65HSXF
OST50N65HMF
OST40N120HMF
OST40N65HXF
OST60N65HXF
OST50N65HXF
OST75N65HSVF
OST80N65HEMF
OST75N65HSNF
OST80N65HSMF
OST90N65HM2F
OST75N65HM2F
OST50N65HM2F
OST60N65HEMF
OST30N65HMF
OST40N65HEMF
OST80N65HEVF
OST15N65FRF
OST25N65FMF
OST15N65PRF
OST40N65PMF
OST25N65PMF
OST15N65KRF
OST30N65KTXF
OST15N65DRF
OST160N65H5MF

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