Specialized in semiconductor power devices and electrical connector agency services

SiC devices

Third generation semiconductor material power devices are one of the important components of future high performance power devices. East Micro R&D team has rich experience in wide band semiconductor research and has successively developed IGBTs and wide band field effect transistors with SiC in parallel.

The new generation of high-speed IGBTs with SiC diodes in parallel, currently in mass production, have significantly improved Eon, trr, Qrr and Qg characteristics and are suitable for use in systems pursuing extreme efficiency, supporting high-speed switching at 80-100kHz and totem pole bridgeless PFC applications.


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