OST75N65HEMF
Classification:
General Description
OST75N65HEMF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
|
|
Applications
|
|
Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VCES, min @ 25°C |
650 |
V |
|
Maximum junction temperature |
175 |
°C |
|
IC, pulse |
300 |
A |
|
VCE(sat), typ @ VGE=15V |
1.45 |
V |
|
Qg |
218 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
OST75N65HEMF |
TO247 |
OST75N65HEM |
Package & Pin Information
Performance Parameters
Package
TO-247
VGE (V)
20
BV (V)
650
IC (A) && Tc=25℃
90
Vth_typ(V)
4.5
Von(V) && Vcesat
1.85
Von(V) && Vf
1.8
Tel：+86-21-62203096 / 62967156
E-mail：Kellyyu@winture-electric.com
Address: Room 503, South 3F, No. 396 Xinfu Road, Minhang District, Shanghai
Industry Applications
About Us
WeChat Public
Copyright © 2022 Shanghai Winture Electric Co., Ltd
