OST50N65HEXF
Classification:
General Description
OST50N65HEXF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
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Applications
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Key Performance Parameters
Parameter |
Value |
Unit |
VCES, min @ 25°C |
650 |
V |
Maximum junction temperature |
175 |
°C |
IC, pulse |
200 |
A |
VCE(sat), typ @ VGE=15V |
1.4 |
V |
Qg |
99 |
nC |
Marking Information
Product Name |
Package |
Marking |
OST50N65HEXF |
TO247 |
OST50N65HEX |
Package & Pin Information
Performance Parameters
Package
TO-247
VGE (V)
20
BV (V)
650
IC (A) && Tc=25℃
80
Vth_typ(V)
4.0
Von(V) && Vcesat
1.85
Von(V) && Vf
2.25