SFSE2S008UGF
Classification:
General Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
|
|
Applications
|
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Key Performance Parameters
|
Parameter |
Value |
Unit |
|
VDS |
25 |
V |
|
ID, pulse |
80 |
A |
|
RDS(ON), max @ VGS =10V |
1 |
mΩ |
|
Qg |
89 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
SFSE2S008UGF |
PDFN5×6
|
SFSE2S008UG |
Package & Pin Information
Performance Parameters
Package
PDFN5*6
Cfg.
N
VDS (V)
25
VGS (V)
20
ID (A) && Tc=25℃
200
Ron (Ω) && 10V
0.001
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