Classification:

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiencystandards.

 

Features       

  • Low RDS(ON) & FOM  
  • Extremely low switching loss
  •  Excellent stability and uniformity

Applications   

  • PC power
  • LED lighting
  • Telecom power
  • Server power
  • EV Charger
  • Solar/UPS

 

Key Performance Parameters

Parameter

Value

Unit

VDS, min @ Tj(max)

900

V

ID, pulse

36

A

RDS(ON), max @ VGS =10V

350

Qg

54

nC

 

Marking Information

Product Name

Package

Marking

OSG90R350HF

TO247

OSG90R350H

 

Package & Pin Information

    

 

 

Performance Parameters

Package

TO-247

Cfg.

N

VDS (V)

900

VGS (V)

30

ID (A) && Tc=25℃

12

Ron (Ω) && 10V

0.35