Classification:

General Description

FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.

 

Features       

  • Low RDS(ON) & FOM  
  • Extremely low switching loss
  •  Excellent stability and uniformity
  •  Fast switching and soft recovery

 

Applications   

  • PD charger
  • Motor driver
  •  Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply

 

Key Performance Parameters

Parameter

Value

Unit

VDS

60

V

ID, pulse

240

A

RDS(ON), max @ VGS =10V

4.5

Qg

33

nC

 

Marking Information

Product Name

Package

Marking

SFS06R045UGF

 
PDFN5×6
 

SFS06R045UG

Package & Pin Information

    

Performance Parameters

Package

PDFN5*6

Cfg.

N

VDS (V)

60

VGS (V)

20

ID (A) && Tc=25℃

60

Ron (Ω) && 10V

0.0045