Classification:

General Description

OSC80N65HF uses advanced Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching 
performance. This device is suitable for mid to high range switching frequency converters.

Features       

  • Advanced TGBTTM technology
  • Excellent conduction and switching loss
  • Excellent stability and uniformity

 

Applications   

  • Induction converters
  • Uninterruptible power supplies

 

Key Performance Parameters

Parameter

Value

Unit

VCES, min @ 25°C

650

V

Maximum junction temperature

175

°C

IC, pulse

200

A

VCE(sat), typ @ VGE=15V

1.85

V

Qg

197

nC

 

Marking Information

Product Name

Package

Marking

OSC80N65HF

TO247

OSC80N65H

 

Package & Pin Information

    

Performance Parameters

Package

TO-247

VGE (V)

20

BV (V)

650

IC (A) && Tc=25℃

114

Vth_typ(V)

4

Von(V) && Vcesat

2.1

Von(V) && Vf

1.5