SFG10R10AF
Classification:
General Description
SFGMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series
is specially designed to use in synchronous rectification power systems with low driving voltage.
Features
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Applications
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Key Performance Parameters
Parameter |
Value |
Unit |
VDS , min @ Tj(max) |
100 |
V |
ID, pulse |
210 |
A |
RDS(ON), max @ VGS =10V |
10 |
mΩ |
Qg |
49.9 |
nC |
Marking Information
Product Name |
Package |
Marking |
SFG10R10AF |
PDFN5×6 |
SFG10R10A |
Package & Pin Information
Performance Parameters
Package
TO-251
Cfg.
N
VDS (V)
100
VGS (V)
20
ID (A) && Tc=25℃
70
Vth_typ(V)
1.75
Ron (Ω) && 10V
0.01
Ron (Ω) && 4.5V
0.012